BCV63,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Package / Case :

TO-253-4, TO-253AA

Emitter Base Voltage (VEBO) :

6V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

30V 6V

Power Dissipation :

250mW

VCEsat-Max :

0.65 V

Transistor Element Material :

SILICON

Max Breakdown Voltage :

6V

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Published :

2010

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA

Gain Bandwidth Product :

100MHz

Lead Free :

Lead Free

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

250mW

Collector Base Voltage (VCBO) :

30V

Collector Emitter Breakdown Voltage :

6V

Base Part Number :

BCV63

Factory Lead Time :

4 Weeks

Current - Collector Cutoff (Max) :

15nA ICBO

Frequency :

100MHz

Pin Count :

4

Number of Elements :

2

Number of Terminations :

4

Element Configuration :

Dual

Operating Temperature :

150°C TJ

Terminal Form :

Gull wing

Transistor Type :

2 NPN (Dual)

Transition Frequency :

100MHz

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

Polarity :

NPN

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

650mV

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G4

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 2mA 5V / 110 @ 2mA 700mV

Contact Plating :

Tin