BCV62BE6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Terminations :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Package / Case :

TO-253-4, TO-253AA

Configuration :

Current Mirror

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Terminal Form :

Gull wing

Voltage - Collector Emitter Breakdown (Max) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Type :

2 PNP (Dual)

Frequency - Transition :

250MHz

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

15nA ICBO

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Number of Elements :

2

Transition Frequency :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Reference Standard :

AEC-Q101

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Part Number :

BCV62

JESD-30 Code :

R-PDSO-G4

Surface Mount :

yes

Power - Max :

300mW

Published :

2005

Current - Collector (Ic) (Max) :

100mA

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Terminal Finish :

Tin (Sn)