BCV62AE6327HTSA1
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- Mfr.Part #
- BCV62AE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-253-4, TO-253AA
- Datasheet
- Download
- Description
- TRANS 2PNP 30V 0.1A SOT143
- Stock
- 10,043
- In Stock ：
- 10,043
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Transistor Type :
- 2 PNP (Dual)
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 300mW
- Halogen Free :
- Not Halogen Free
- Base Part Number :
- BCV62
- Number of Elements :
- 2
- Package / Case :
- TO-253-4, TO-253AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency :
- 250MHz
- Collector Base Voltage (VCBO) :
- 30V
- Width :
- 1.3mm
- Length :
- 2.9mm
- Voltage - Rated DC :
- -30V
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 125 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 5V
- Max Breakdown Voltage :
- 30V
- Polarity :
- PNP
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Published :
- 2001
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 10 Weeks
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 650mV
- Configuration :
- Current Mirror
- Max Collector Current :
- 100mA
- Height :
- 1mm
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -100mA
- Reference Standard :
- AEC-Q101
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Terminations :
- 4
- Power Dissipation :
- 300mW
- Transition Frequency :
- 250MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Datasheets
- BCV62AE6327HTSA1
BCV62AE6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Infineon Technologies stock available at
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