BCR198WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

70

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 5V

Base Part Number :

BCR198

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SC-70, SOT-323

Max Power Dissipation :

250mW

Contact Plating :

Tin

Max Operating Temperature :

150°C

Height :

800μm

Length :

2mm

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Saturation Voltage :

300mV

Packaging :

Tape and Reel (TR)

Frequency - Transition :

190MHz

Lead Free :

Lead Free

Number of Terminations :

3

Element Configuration :

Single

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

300mV

Factory Lead Time :

26 Weeks

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

JESD-609 Code :

e3

Halogen Free :

Halogen Free

Transistor Type :

PNP - Pre-Biased

Mount :

Surface Mount

Transition Frequency :

190MHz

Min Operating Temperature :

-65°C

Number of Pins :

3

HTS Code :

8541.21.00.75

Terminal Position :

Dual

Number of Elements :

1

Resistor - Base (R1) :

47 k Ω

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

ECCN Code :

EAR99

Width :

1.25mm

Published :

2009

Polarity :

PNP

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

47 k Ω