BCR198WH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Polarity :

PNP

Width :

1.25mm

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Number of Elements :

1

Contact Plating :

Tin

Terminal Form :

Gull wing

Transistor Type :

PNP - Pre-Biased

Height :

800μm

Number of Terminations :

3

Frequency - Transition :

190MHz

Length :

2mm

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

HTS Code :

8541.21.00.75

Mount :

Surface Mount

Number of Pins :

3

Published :

2009

Radiation Hardening :

No

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Mounting Type :

Surface Mount

Package / Case :

SC-70, SOT-323

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 5V

Packaging :

Tape and Reel (TR)

Collector Emitter Saturation Voltage :

300mV

Base Part Number :

BCR198

Max Power Dissipation :

250mW

Factory Lead Time :

26 Weeks

hFE Min :

70

Current - Collector Cutoff (Max) :

100nA ICBO

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Min Operating Temperature :

-65°C

Collector Emitter Voltage (VCEO) :

300mV

ECCN Code :

EAR99

JESD-609 Code :

e3

Resistor - Base (R1) :

47 k Ω

Transition Frequency :

190MHz

Element Configuration :

Single

Resistor - Emitter Base (R2) :

47 k Ω