BCR198E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

47 k Ω

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

hFE Min :

70

Transition Frequency :

190MHz

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

300mV

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Current - Collector Cutoff (Max) :

100nA ICBO

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

300mV

Max Operating Temperature :

150°C

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Transistor Type :

PNP - Pre-Biased

Lead Free :

Lead Free

Mount :

Surface Mount

Number of Terminations :

3

Element Configuration :

Single

Published :

2004

Max Breakdown Voltage :

50V

Max Collector Current :

100mA

Max Power Dissipation :

200mW

Base Part Number :

BCR198

Polarity :

PNP

Pbfree Code :

yes

Factory Lead Time :

26 Weeks

Package / Case :

TO-236-3, SC-59, SOT-23-3

Length :

2.9mm

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Form :

Gull wing

Frequency - Transition :

190MHz

Halogen Free :

Not Halogen Free

Min Operating Temperature :

-65°C

Terminal Position :

Dual

Number of Elements :

1

Resistor - Base (R1) :

47 k Ω

Height :

1mm

Width :

1.3mm

ECCN Code :

EAR99

Contact Plating :

Tin

Current Rating :

-70mA

Voltage - Rated DC :

-50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 5V