BCP5616E6327HTSA1
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- Mfr.Part #
- BCP5616E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-4
- Stock
- 5,681
- In Stock ：
- 5,681
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Compliant
- Published :
- 2009
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Base Part Number :
- BCP56
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 2W
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Frequency - Transition :
- 100MHz
- Datasheets
- BCP5616E6327HTSA1
NPN 150°C TJ 100nA ICBO TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5616E6327HTSA1 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 80V maximal voltage is present.
BCP5616E6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP5616E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCP5616E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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