BCP5610QTA
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- Mfr.Part #
- BCP5610QTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223-3
- Stock
- 11,208
- In Stock ：
- 11,208
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Frequency - Transition :
- 150MHz
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Factory Lead Time :
- 22 Weeks
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-261-4, TO-261AA
- Power - Max :
- 2W
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Current - Collector (Ic) (Max) :
- 1A
- Series :
- Automotive, AEC-Q101
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BCP5610QTA
NPN -65°C~150°C TJ 100nA ICBO TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5610QTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.
BCP5610QTA Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP5610QTA Applications
There are a lot of Diodes Incorporated
BCP5610QTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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