BCP5610E6327HTSA1

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Mfr.Part #
BCP5610E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 80V 1A SOT223-4
Stock
15,948
In Stock :
15,948

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2011
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Voltage (VCEO) :
500mV
Packaging :
Tape and Reel (TR)
Mount :
Surface Mount
Power Dissipation :
2W
DC Current Gain (hFE) (Min) @ Ic, Vce :
63 @ 150mA 2V
Mounting Type :
Surface Mount
Number of Elements :
1
Number of Pins :
4
Radiation Hardening :
No
Current - Collector (Ic) (Max) :
1A
Collector Emitter Breakdown Voltage :
80V
Max Power Dissipation :
2W
RoHS Status :
RoHS Compliant
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Max Collector Current :
1A
Base Part Number :
BCP56
Collector Base Voltage (VCBO) :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-261-4, TO-261AA
Frequency :
100MHz
Transistor Type :
NPN
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
5V
Operating Temperature :
150°C TJ
Datasheets
BCP5610E6327HTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCP5610E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:4, Base Part Number:BCP56, Package / Case:TO-261-4, TO-261AA, Operating Temperature:150°C TJ, BCP5610E6327HTSA1 pinout, BCP5610E6327HTSA1 datasheet PDF, BCP5610E6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCP5610E6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCP5610E6327HTSA1


NPN 150°C TJ 100nA ICBO 1 Elements TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BCP5610E6327HTSA1 Overview


This device has a DC current gain of 63 @ 150mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 1A volts is possible.

BCP5610E6327HTSA1 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


BCP5610E6327HTSA1 Applications


There are a lot of Infineon Technologies
BCP5610E6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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