BCP56-10,115
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- Mfr.Part #
- BCP56-10,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 347,634
- In Stock ：
- 347,634
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 4
- Number of Pins :
- 4
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Length :
- 6.7mm
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 960mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Power Dissipation :
- 960mW
- Operating Temperature :
- 150°C TJ
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Published :
- 2007
- Weight :
- 4.535924g
- Packaging :
- Tape and Reel (TR)
- Width :
- 3.7mm
- Max Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 500mV
- Gain Bandwidth Product :
- 180MHz
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Voltage (VCEO) :
- 80V
- Base Part Number :
- BCP56
- Radiation Hardening :
- No
- Height :
- 1.7mm
- Transition Frequency :
- 180MHz
- Number of Terminations :
- 4
- Polarity/Channel Type :
- NPN
- Frequency :
- 180MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- BCP56-10,115
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56-10,115 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP56-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCP56-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP56-10,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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