BCP56-10,115
- Mfr.Part #
- BCP56-10,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 347,634
- In Stock :
- 347,634
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 4
- Published :
- 2007
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-261-4, TO-261AA
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Height :
- 1.7mm
- Max Power Dissipation :
- 960mW
- Lead Free :
- Lead Free
- Transition Frequency :
- 180MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 80V
- Width :
- 3.7mm
- Length :
- 6.7mm
- Power Dissipation :
- 960mW
- Max Collector Current :
- 1A
- Weight :
- 4.535924g
- JESD-609 Code :
- e3
- Base Part Number :
- BCP56
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 4
- Collector Base Voltage (VCBO) :
- 100V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 180MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Frequency :
- 180MHz
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Datasheets
- BCP56-10,115
BCP56-10,115 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56-10,115 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP56-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCP56-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP56-10,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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