BCP56-10,115
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- Mfr.Part #
- BCP56-10,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 347,634
- In Stock ：
- 347,634
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Power Dissipation :
- 960mW
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Collector Emitter Voltage (VCEO) :
- 80V
- Pin Count :
- 4
- Length :
- 6.7mm
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Base Voltage (VCBO) :
- 100V
- Terminal Form :
- Gull wing
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 80V
- Number of Terminations :
- 4
- Max Power Dissipation :
- 960mW
- Width :
- 3.7mm
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- BCP56
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Published :
- 2007
- Height :
- 1.7mm
- Frequency :
- 180MHz
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 500mV
- Transition Frequency :
- 180MHz
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 180MHz
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Element Configuration :
- Single
- Number of Pins :
- 4
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Datasheets
- BCP56-10,115
BCP56-10,115 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP56-10,115 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 180MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCP56-10,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCP56-10,115 Applications
There are a lot of Nexperia USA Inc.
BCP56-10,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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