BCP53-10,135
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- Mfr.Part #
- BCP53-10,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT223
- Stock
- 1,453
- In Stock ：
- 1,453
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Base Part Number :
- BCP53
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 145MHz
- Transition Frequency :
- 145MHz
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 80V
- Frequency :
- 145MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 4
- Number of Elements :
- 1
- Number of Pins :
- 4
- Published :
- 2008
- Max Collector Current :
- 1A
- Power - Max :
- 1W
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 1W
- Power Dissipation :
- 1.35W
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Datasheets
- BCP53-10,135
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP53-10,135 Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.145MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.
BCP53-10,135 Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 145MHz
BCP53-10,135 Applications
There are a lot of Nexperia USA Inc.
BCP53-10,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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