BCP5210TA
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- Mfr.Part #
- BCP5210TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A SOT223-3
- Stock
- 3,304
- In Stock ：
- 3,304
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- REACH SVHC :
- No SVHC
- Height :
- 1.65mm
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 2W
- Additional Feature :
- High Reliability
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2W
- Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 125MHz
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Length :
- 6.55mm
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 4
- Terminal Form :
- Gull wing
- Published :
- 2013
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Base Part Number :
- BCP52
- Pin Count :
- 4
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -500mV
- Width :
- 3.55mm
- Transistor Type :
- PNP
- Weight :
- 7.994566mg
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Datasheets
- BCP5210TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BCP5210TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 63 @ 150mA 2V DC current gain.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 1A volts.
BCP5210TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5210TA Applications
There are a lot of Diodes Incorporated
BCP5210TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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