BCM857DS115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mounting Type :

Surface Mount

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

-5V

Max Junction Temperature (Tj) :

150°C

Max Operating Temperature :

150°C

Factory Lead Time :

4 Weeks

Gain Bandwidth Product :

175MHz

Power - Max :

380mW

Ambient Temperature Range High :

150°C

Width :

3.2mm

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Radiation Hardening :

No

Mount :

Surface Mount

Frequency :

16MHz

ESR (Equivalent Series Resistance) :

50Ohm

Operating Temperature :

150°C TJ

Published :

2008

Max Breakdown Voltage :

45V

Packaging :

Tape and Reel (TR)

hFE Min :

200

Contact Plating :

Tin

Package / Case :

SC-74, SOT-457

Transistor Type :

2 PNP (Dual) Matched Pair

Supplier Device Package :

6-TSOP

REACH SVHC :

No SVHC

Base Part Number :

BCM857

Frequency Tolerance :

0.002%

Polarity :

PNP

Current - Collector (Ic) (Max) :

100mA

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

15nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Zener Voltage :

3.3V

Height :

1.1mm

Collector Emitter Voltage (VCEO) :

-45V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

380mW

Weight :

4.535924g

Length :

5mm

Max Collector Current :

-100mA

Tolerance :

0.002%

Min Operating Temperature :

-65°C

Frequency - Transition :

175MHz

Lead Free :

Lead Free

Resistance :

50Ohm

Collector Base Voltage (VCBO) :

-50V

Load Capacitance :

18pF

Max Power Dissipation :

380mW

Collector Emitter Saturation Voltage :

-200mV

Collector Emitter Breakdown Voltage :

-45V

Number of Pins :

6

Voltage - Collector Emitter Breakdown (Max) :

45V

Test Current :

5mA