BCM857BV,315
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- Mfr.Part #
- BCM857BV,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- NOW NEXPERIA BCM857BV - SMALL SI
- Stock
- 3,301
- In Stock ：
- 3,301
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Power - Max :
- 300mW
- Number of Terminations :
- 6
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 175MHz
- Max Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Number of Elements :
- 2
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Polarity :
- PNP
- Published :
- 2009
- Max Collector Current :
- 100mA
- Base Part Number :
- BCM857
- Collector Emitter Voltage (VCEO) :
- 400mV
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Flat
- Configuration :
- SEPARATE, 2 ELEMENTS
- JESD-609 Code :
- e3
- Package / Case :
- SOT-563, SOT-666
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- 2 PNP (Dual) Matched Pair
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 175MHz
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Collector Base Voltage (VCBO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pin Count :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 300mW
- Datasheets
- BCM857BV,315
BCM857BV,315 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at
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