BCM857BS,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Form :

Gull wing

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

15nA ICBO

Number of Terminations :

6

JESD-609 Code :

e3

Max Breakdown Voltage :

45V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Transition Frequency :

175MHz

Max Collector Current :

100mA

Voltage :

45V

Emitter Base Voltage (VEBO) :

5V

Number of Pins :

6

Zener Voltage :

39V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Gain Bandwidth Product :

175MHz

Test Current :

5mA

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Collector Emitter Voltage (VCEO) :

-45V

Frequency :

175MHz

Max Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Base Part Number :

BCM857

Collector Base Voltage (VCBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Current - Collector (Ic) (Max) :

100mA

Width :

1.35mm

Transistor Type :

2 PNP (Dual) Matched Pair

Height :

1mm

Package / Case :

6-TSSOP, SC-88, SOT-363

Tolerance :

5%

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Operating Temperature :

150°C TJ

Mount :

Surface Mount

ECCN Code :

EAR99

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

Length :

2.2mm

Contact Plating :

Tin

Current :

1A

Power Dissipation :

300mW

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

400mV

Published :

2009

Polarity :

PNP

Collector Emitter Breakdown Voltage :

-45V

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual