BCM856BSF

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Reference Standard :

AEC-Q101; IEC-60134

Current - Collector (Ic) (Max) :

100mA

Power - Max :

200mW

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Package / Case :

6-TSSOP, SC-88, SOT-363

Surface Mount :

yes

Published :

2008

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

15nA ICBO

JESD-30 Code :

R-PDSO-G6

Number of Elements :

2

Frequency - Transition :

100MHz

Configuration :

SEPARATE, 2 ELEMENTS

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Terminal Form :

Gull wing

Transition Frequency :

175MHz

Factory Lead Time :

4 Weeks

Transistor Type :

2 PNP (Dual)

Voltage - Collector Emitter Breakdown (Max) :

65V

Number of Terminations :

6

Mounting Type :

Surface Mount