BCM847DS,115
- Mfr.Part #
- BCM847DS,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA BCM847DS - SMALL SIGNAL
- Stock
- 194,241
- In Stock :
- 194,241
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Power Dissipation :
- 380mW
- Pin Count :
- 6
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 45V
- Published :
- 2008
- Mount :
- Surface Mount
- Base Part Number :
- BCM847
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 380mW
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Gain Bandwidth Product :
- 250MHz
- Package / Case :
- SC-74, SOT-457
- Number of Elements :
- 2
- Polarity :
- NPN
- Terminal Form :
- Gull wing
- Frequency :
- 250MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Transistor Type :
- 2 NPN (Dual) Matched Pair
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Number of Terminations :
- 6
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 250MHz
- Element Configuration :
- Dual
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Datasheets
- BCM847DS,115

BCM847DS,115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Nexperia USA Inc. stock available at
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