BCM847BV,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Collector Base Voltage (VCBO) :

50V

Polarity :

NPN

Number of Elements :

2

Weight :

4.535924g

Radiation Hardening :

No

Frequency :

250MHz

Max Operating Temperature :

150°C

Height :

600μm

Contact Plating :

Tin

Max Collector Current :

100mA

Transistor Type :

2 NPN (Dual) Matched Pair

Factory Lead Time :

4 Weeks

Emitter Base Voltage (VEBO) :

6V

Current - Collector (Ic) (Max) :

100mA

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Max Power Dissipation :

300mW

Min Operating Temperature :

-65°C

Operating Temperature :

150°C TJ

Gain Bandwidth Product :

250MHz

Published :

2006

hFE Min :

200

Element Configuration :

Dual

Power - Max :

300mW

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Length :

1.7mm

Max Frequency :

250MHz

Power Dissipation :

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Frequency - Transition :

250MHz

Collector Emitter Voltage (VCEO) :

45V

Base Part Number :

BCM847

Collector Emitter Breakdown Voltage :

45V

Collector Emitter Saturation Voltage :

400mV

Termination :

SMD/SMT

Current - Collector Cutoff (Max) :

15nA ICBO

Width :

1.3mm

Mounting Type :

Surface Mount

Max Breakdown Voltage :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Supplier Device Package :

SOT-666

Voltage - Collector Emitter Breakdown (Max) :

45V

Number of Pins :

6