BC81840MTF
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- Mfr.Part #
- BC81840MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 7,467
- In Stock ：
- 7,467
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 930μm
- Frequency :
- 100MHz
- Number of Elements :
- 1
- Length :
- 2.9mm
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 25V
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Max Collector Current :
- 800mA
- Contact Plating :
- Tin
- Base Part Number :
- BC818
- Power Dissipation :
- 310mW
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 700mV
- Terminal Position :
- Dual
- Factory Lead Time :
- 13 Weeks
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Max Power Dissipation :
- 310mW
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- hFE Min :
- 100
- Collector Emitter Voltage (VCEO) :
- 25V
- Collector Emitter Breakdown Voltage :
- 25V
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Width :
- 1.3mm
- Current - Collector Cutoff (Max) :
- 100nA
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Weight :
- 30mg
- Published :
- 2004
- Datasheets
- BC81840MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81840MTF Overview
DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 800mA volts.
BC81840MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81840MTF Applications
There are a lot of ON Semiconductor
BC81840MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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