BC81840
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- Mfr.Part #
- BC81840
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- 0.5A, 25V, NPN, TO
- Stock
- 16,393
- In Stock ：
- 16,393
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Power - Max :
- 225mW
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Halogen Free :
- Halogen Free
- Collector Emitter Breakdown Voltage :
- 25V
- Collector Emitter Voltage (VCEO) :
- 25V
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Published :
- 2008
- Base Part Number :
- BC818
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Length :
- 3.04mm
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 500mA
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 225mW
- Max Breakdown Voltage :
- 25V
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- hFE Min :
- 250
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 1.11mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 700mV
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Width :
- 1.4mm
- Datasheets
- BC81840
NPN -55°C~150°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC818-40LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 500mA volts.
BC818-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
BC818-40LT1G Applications
There are a lot of ON Semiconductor
BC818-40LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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