BC81825MTF
- Mfr.Part #
- BC81825MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 11,398
- In Stock :
- 11,398
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 30mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 30V
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Width :
- 1.3mm
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Pbfree Code :
- yes
- Length :
- 2.9mm
- Factory Lead Time :
- 6 Weeks
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 25V
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Height :
- 930μm
- Max Power Dissipation :
- 310mW
- Published :
- 2004
- Max Breakdown Voltage :
- 25V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BC818
- Collector Emitter Voltage (VCEO) :
- 25V
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Collector Emitter Saturation Voltage :
- 700mV
- RoHS Status :
- RoHS Compliant
- Contact Plating :
- Tin
- hFE Min :
- 100
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Max Collector Current :
- 800mA
- Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA
- Power Dissipation :
- 310mW
- Datasheets
- BC81825MTF

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81825MTF Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 800mA volts.
BC81825MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81825MTF Applications
There are a lot of ON Semiconductor
BC81825MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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