BC81825MTF
- Mfr.Part #
- BC81825MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 11,398
- In Stock :
- 11,398
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 310mW
- Base Part Number :
- BC818
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 700mV
- Collector Emitter Breakdown Voltage :
- 25V
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 800mA
- Width :
- 1.3mm
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Surface Mount
- Length :
- 2.9mm
- Max Power Dissipation :
- 310mW
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 25V
- Lead Free :
- Lead Free
- Weight :
- 30mg
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 25V
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 6 Weeks
- hFE Min :
- 100
- Published :
- 2004
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Height :
- 930μm
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Datasheets
- BC81825MTF

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81825MTF Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 800mA volts.
BC81825MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81825MTF Applications
There are a lot of ON Semiconductor
BC81825MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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