BC81825MTF
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- Mfr.Part #
- BC81825MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 11,398
- In Stock ：
- 11,398
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 700mV
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 310mW
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Base Part Number :
- BC818
- RoHS Status :
- RoHS Compliant
- Weight :
- 30mg
- Factory Lead Time :
- 6 Weeks
- Width :
- 1.3mm
- Height :
- 930μm
- Packaging :
- Tape and Reel (TR)
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Length :
- 2.9mm
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 25V
- Power Dissipation :
- 310mW
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Base Voltage (VCBO) :
- 30V
- Max Collector Current :
- 800mA
- Max Breakdown Voltage :
- 25V
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 25V
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- hFE Min :
- 100
- Datasheets
- BC81825MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81825MTF Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 800mA volts.
BC81825MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81825MTF Applications
There are a lot of ON Semiconductor
BC81825MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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