BC81825MTF
- Mfr.Part #
- BC81825MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 11,398
- In Stock :
- 11,398
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Factory Lead Time :
- 6 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Weight :
- 30mg
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 310mW
- Published :
- 2004
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Width :
- 1.3mm
- Pbfree Code :
- yes
- Base Part Number :
- BC818
- Collector Emitter Breakdown Voltage :
- 25V
- Max Breakdown Voltage :
- 25V
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Height :
- 930μm
- Power Dissipation :
- 310mW
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 700mV
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 25V
- Mount :
- Surface Mount
- Max Collector Current :
- 800mA
- Number of Pins :
- 3
- hFE Min :
- 100
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- RoHS Compliant
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Length :
- 2.9mm
- ECCN Code :
- EAR99
- Datasheets
- BC81825MTF

NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81825MTF Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 25V volts.In extreme cases, the collector current can be as low as 800mA volts.
BC81825MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81825MTF Applications
There are a lot of ON Semiconductor
BC81825MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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