BC81816MTF
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- Mfr.Part #
- BC81816MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 700mV
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 310mW
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Height :
- 930μm
- Current - Collector Cutoff (Max) :
- 100nA
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 25V
- Number of Pins :
- 3
- Frequency :
- 100MHz
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Factory Lead Time :
- 6 Weeks
- Published :
- 2008
- Lead Free :
- Lead Free
- Weight :
- 30mg
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Max Collector Current :
- 800mA
- Transistor Application :
- SWITCHING
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 100mA 1V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 25V
- Max Breakdown Voltage :
- 25V
- Length :
- 2.9mm
- Power Dissipation :
- 310mW
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- BC818
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Datasheets
- BC81816MTF
BC81816MTF Documents
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81816MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 800mA volts.
BC81816MTF Features
the DC current gain for this device is 110 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81816MTF Applications
There are a lot of ON Semiconductor
BC81816MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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