BC81816MTF
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- Mfr.Part #
- BC81816MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Published :
- 2008
- Terminal Form :
- Gull wing
- Length :
- 2.9mm
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 700mV
- Collector Emitter Voltage (VCEO) :
- 25V
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 30V
- Weight :
- 30mg
- Max Power Dissipation :
- 310mW
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Max Collector Current :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 25V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 100mA 1V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Width :
- 1.3mm
- Power Dissipation :
- 310mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 25V
- Height :
- 930μm
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- BC818
- JESD-609 Code :
- e3
- hFE Min :
- 100
- Frequency :
- 100MHz
- Element Configuration :
- Single
- Datasheets
- BC81816MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81816MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 800mA volts.
BC81816MTF Features
the DC current gain for this device is 110 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81816MTF Applications
There are a lot of ON Semiconductor
BC81816MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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