BC81816MTF
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- Mfr.Part #
- BC81816MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.8A SOT23-3
- Stock
- 9,000
- In Stock ：
- 9,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Height :
- 930μm
- Contact Plating :
- Tin
- Max Collector Current :
- 800mA
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 310mW
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.3mm
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 25V
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 25V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 100MHz
- Frequency :
- 100MHz
- Weight :
- 30mg
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 310mW
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Length :
- 2.9mm
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 100
- Factory Lead Time :
- 6 Weeks
- Radiation Hardening :
- No
- Base Part Number :
- BC818
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 700mV
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 100mA 1V
- Published :
- 2008
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 25V
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 30V
- Number of Elements :
- 1
- Datasheets
- BC81816MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81816MTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 800mA volts.
BC81816MTF Features
the DC current gain for this device is 110 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81816MTF Applications
There are a lot of ON Semiconductor
BC81816MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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