BC817W,135
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- Mfr.Part #
- BC817W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC817W - SMALL SIGN
- Stock
- 10,000
- In Stock ：
- 10,000
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Pin Count :
- 3
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Base Part Number :
- BC817
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- SC-70, SOT-323
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Published :
- 2009
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 200mW
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BC817W,135
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC817W,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BC817W,135 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817W,135 Applications
There are a lot of Nexperia USA Inc.
BC817W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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