BC817K25E6433HTMA1

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Mfr.Part #
BC817K25E6433HTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 45V 0.5A SOT23
Stock
8,370
In Stock :
8,370

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reference Standard :
AEC-Q101
Number of Terminations :
3
JESD-30 Code :
R-PDSO-G3
Published :
2011
Collector Base Voltage (VCBO) :
50V
Terminal Position :
Dual
Frequency - Transition :
170MHz
Configuration :
Single
Collector Emitter Voltage (VCEO) :
700mV
Packaging :
Tape and Reel (TR)
Operating Temperature :
150°C TJ
Max Power Dissipation :
500mW
Power - Max :
500mW
Terminal Form :
Gull wing
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Max Collector Current :
500mA
Transistor Type :
NPN
Transition Frequency :
170MHz
Number of Elements :
1
Pbfree Code :
yes
Base Part Number :
BC817
Transistor Application :
AMPLIFIER
Package / Case :
TO-236-3, SC-59, SOT-23-3
Max Breakdown Voltage :
45V
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Collector Emitter Breakdown Voltage :
45V
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
Mount :
Surface Mount
Contact Plating :
Tin
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BC817K25E6433HTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:3, Operating Temperature:150°C TJ, Base Part Number:BC817, Package / Case:TO-236-3, SC-59, SOT-23-3, BC817K25E6433HTMA1 pinout, BC817K25E6433HTMA1 datasheet PDF, BC817K25E6433HTMA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BC817K25E6433HTMA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BC817K25E6433HTMA1


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC817K25E6433HTMA1 Overview


In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.170MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.

BC817K25E6433HTMA1 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 170MHz


BC817K25E6433HTMA1 Applications


There are a lot of Infineon Technologies
BC817K25E6433HTMA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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