BC817K25E6327HTSA1
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- Mfr.Part #
- BC817K25E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23
- Stock
- 6,601
- In Stock ：
- 6,601
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power - Max :
- 500mW
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Halogen Free :
- Not Halogen Free
- Max Power Dissipation :
- 500mW
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Published :
- 2004
- Transistor Type :
- NPN
- Base Part Number :
- BC817
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transition Frequency :
- 170MHz
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 700mV
- Power Dissipation :
- 330mW
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Pins :
- 3
- Height :
- 900μm
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Length :
- 2.9mm
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Saturation Voltage :
- 700mV
- Max Collector Current :
- 500mA
- Mount :
- Surface Mount
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 170MHz
- Datasheets
- BC817K25E6327HTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817K25E6327HTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 170MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817K25E6327HTSA1 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K25E6327HTSA1 Applications
There are a lot of Infineon Technologies
BC817K25E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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