BC817K16E6433HTMA1
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- Mfr.Part #
- BC817K16E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23
- Stock
- 49,674
- In Stock ：
- 49,674
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Frequency :
- 170MHz
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Current - Collector (Ic) (Max) :
- 500mA
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 170MHz
- Base Part Number :
- BC817
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 500mW
- Max Power Dissipation :
- 500mW
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 50V
- Lead Free :
- Lead Free
- Datasheets
- BC817K16E6433HTMA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817K16E6433HTMA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 170MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BC817K16E6433HTMA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K16E6433HTMA1 Applications
There are a lot of Infineon Technologies
BC817K16E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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