BC817K16E6327HTSA1
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- Mfr.Part #
- BC817K16E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23
- Stock
- 17,871
- In Stock ：
- 17,871
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 500mW
- Contact Plating :
- Tin
- Height :
- 900μm
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 700mV
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 500mW
- Number of Pins :
- 3
- Base Part Number :
- BC817
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Published :
- 2011
- Width :
- 1.3mm
- Max Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Halogen Free :
- Not Halogen Free
- Number of Elements :
- 1
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Transition Frequency :
- 170MHz
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 700mV
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Frequency :
- 170MHz
- ECCN Code :
- EAR99
- Length :
- 2.9mm
- Datasheets
- BC817K16E6327HTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817K16E6327HTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 170MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817K16E6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K16E6327HTSA1 Applications
There are a lot of Infineon Technologies
BC817K16E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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