BC817K16E6327HTSA1
- Mfr.Part #
- BC817K16E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23
- Stock
- 17,871
- In Stock :
- 17,871
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- 700mV
- Frequency :
- 170MHz
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 700mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 500mW
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Mount :
- Surface Mount
- Length :
- 2.9mm
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 45V
- Base Part Number :
- BC817
- Height :
- 900μm
- Halogen Free :
- Not Halogen Free
- Width :
- 1.3mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Published :
- 2011
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 170MHz
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Power Dissipation :
- 500mW
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- BC817K16E6327HTSA1
BC817K16E6327HTSA1 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817K16E6327HTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 170MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817K16E6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K16E6327HTSA1 Applications
There are a lot of Infineon Technologies
BC817K16E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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