BC817K-25WH6433
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- Mfr.Part #
- BC817K-25WH6433
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- BIPOLAR GEN PURPOSE TRANSISTOR
- Stock
- 10,788
- In Stock ：
- 10,788
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 250mW
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 170MHz
- Pbfree Code :
- yes
- Power Dissipation :
- 250mW
- Published :
- 2008
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 45V
- Current - Collector (Ic) (Max) :
- 500mA
- Configuration :
- Single
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Frequency :
- 170MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Base Part Number :
- BC817
- Max Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Number of Elements :
- 1
- Datasheets
- BC817K-25WH6433
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC817K25WH6433XTMA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 170MHz.A maximum collector current of 500mA volts can be achieved.
BC817K25WH6433XTMA1 Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K25WH6433XTMA1 Applications
There are a lot of Infineon Technologies
BC817K25WH6433XTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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