BC81725MTF
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- Mfr.Part #
- BC81725MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 75,697
- In Stock ：
- 75,697
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 1.3mm
- Transistor Element Material :
- SILICON
- Current :
- 8A
- Terminal Form :
- Gull wing
- Published :
- 2004
- Base Part Number :
- BC817
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA
- Length :
- 2.9mm
- Collector Emitter Saturation Voltage :
- 700mV
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 310mW
- Max Power Dissipation :
- 310mW
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Element Configuration :
- Single
- hFE Min :
- 100
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Voltage :
- 45V
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- JESD-609 Code :
- e3
- Height :
- 970μm
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Max Collector Current :
- 800mA
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Weight :
- 59.987591mg
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Datasheets
- BC81725MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81725MTF Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BC81725MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81725MTF Applications
There are a lot of ON Semiconductor
BC81725MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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