BC81725MTF
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- Mfr.Part #
- BC81725MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 75,697
- In Stock ：
- 75,697
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 100
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Max Power Dissipation :
- 310mW
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Power Dissipation :
- 310mW
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Weight :
- 59.987591mg
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 700mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2004
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 800mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current :
- 8A
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Width :
- 1.3mm
- Height :
- 970μm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Base Voltage (VCBO) :
- 50V
- Length :
- 2.9mm
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- BC817
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Breakdown Voltage :
- 45V
- Voltage :
- 45V
- Datasheets
- BC81725MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81725MTF Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BC81725MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81725MTF Applications
There are a lot of ON Semiconductor
BC81725MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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