BC81725MTF
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- Mfr.Part #
- BC81725MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 75,697
- In Stock ：
- 75,697
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current :
- 8A
- Current - Collector Cutoff (Max) :
- 100nA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Base Part Number :
- BC817
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- RoHS Status :
- RoHS Compliant
- Weight :
- 59.987591mg
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Length :
- 2.9mm
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 100
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Width :
- 1.3mm
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 310mW
- Published :
- 2004
- Mount :
- Surface Mount
- Power Dissipation :
- 310mW
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Height :
- 970μm
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- 700mV
- Voltage :
- 45V
- ECCN Code :
- EAR99
- Max Collector Current :
- 800mA
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Datasheets
- BC81725MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81725MTF Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
BC81725MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81725MTF Applications
There are a lot of ON Semiconductor
BC81725MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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