BC81716MTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Collector Current :

800mA

RoHS Status :

RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 100mA 1V

Collector Base Voltage (VCBO) :

50V

Radiation Hardening :

No

Number of Terminations :

3

hFE Min :

100

Power Dissipation :

310mW

Published :

2004

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Weight :

59.987591mg

Pbfree Code :

yes

Terminal Position :

Dual

Current :

8A

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Voltage :

45V

Mounting Type :

Surface Mount

Height :

970μm

Collector Emitter Saturation Voltage :

700mV

Width :

1.3mm

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Polarity/Channel Type :

NPN

Max Breakdown Voltage :

45V

Current - Collector Cutoff (Max) :

100nA

JESD-609 Code :

e3

Number of Pins :

3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Frequency :

100MHz

Emitter Base Voltage (VEBO) :

5V

Length :

2.9mm

Base Part Number :

BC817

Transistor Type :

NPN

Max Power Dissipation :

310mW

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Collector Emitter Voltage (VCEO) :

45V

Lead Free :

Lead Free

Gain Bandwidth Product :

100MHz

Transition Frequency :

100MHz

Factory Lead Time :

6 Weeks

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

45V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)