BC81716MTF
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- Mfr.Part #
- BC81716MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.8A SOT23-3
- Stock
- 19,059
- In Stock ：
- 19,059
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- Max Power Dissipation :
- 310mW
- ECCN Code :
- EAR99
- hFE Min :
- 100
- Frequency :
- 100MHz
- Voltage :
- 45V
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 100mA 1V
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 6 Weeks
- Width :
- 1.3mm
- Current :
- 8A
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 700mV
- Max Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BC817
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Weight :
- 59.987591mg
- Length :
- 2.9mm
- Current - Collector Cutoff (Max) :
- 100nA
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 310mW
- Published :
- 2004
- Height :
- 970μm
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 800mA
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- BC81716MTF
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC81716MTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 800mA volts can be achieved.
BC81716MTF Features
the DC current gain for this device is 110 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC81716MTF Applications
There are a lot of ON Semiconductor
BC81716MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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