BC817-40WT1G
- Mfr.Part #
- BC817-40WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SC70-3
- Stock
- 1,731
- In Stock :
- 1,731
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Package / Case :
- SC-70, SOT-323
- Polarity/Channel Type :
- NPN
- Power - Max :
- 460mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 9 hours ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 700mV
- Max Power Dissipation :
- 460mW
- Configuration :
- Single
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Published :
- 2001
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PDSO-G3
- JESD-609 Code :
- e3
- Max Collector Current :
- 500mA
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Mount :
- Surface Mount
- Frequency - Transition :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- BC817-40WT1G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC817-40WT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BC817-40WT1G Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40WT1G Applications
There are a lot of ON Semiconductor
BC817-40WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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