BC817-40WT1G

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Mfr.Part #
BC817-40WT1G
Manufacturer
onsemi
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS NPN 45V 0.5A SC70-3
Stock
1,731
In Stock :
1,731

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Package / Case :
SC-70, SOT-323
Polarity/Channel Type :
NPN
Power - Max :
460mW
Current - Collector Cutoff (Max) :
100nA ICBO
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lifecycle Status :
ACTIVE (Last Updated: 9 hours ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
700mV
Max Power Dissipation :
460mW
Configuration :
Single
Contact Plating :
Tin
Mounting Type :
Surface Mount
Published :
2001
Lead Free :
Lead Free
Collector Emitter Breakdown Voltage :
45V
DC Current Gain (hFE) (Min) @ Ic, Vce :
250 @ 100mA 1V
Number of Elements :
1
JESD-30 Code :
R-PDSO-G3
JESD-609 Code :
e3
Max Collector Current :
500mA
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Transistor Type :
NPN
Factory Lead Time :
8 Weeks
RoHS Status :
ROHS3 Compliant
Transition Frequency :
100MHz
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Mount :
Surface Mount
Frequency - Transition :
100MHz
Collector Base Voltage (VCBO) :
50V
Emitter Base Voltage (VEBO) :
5V
Terminal Position :
Dual
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pbfree Code :
yes
Operating Temperature :
-55°C~150°C TJ
Datasheets
BC817-40WT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi BC817-40WT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:SC-70, SOT-323, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, BC817-40WT1G pinout, BC817-40WT1G datasheet PDF, BC817-40WT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC817-40WT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC817-40WT1G


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount

BC817-40WT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

BC817-40WT1G Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BC817-40WT1G Applications


There are a lot of ON Semiconductor
BC817-40WT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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