BC817-40W,135
- Mfr.Part #
- BC817-40W,135
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- BC817W - 45 V, 500 MA NPN GENERA
- Stock
- 211,381
- In Stock :
- 211,381
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Max Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Package / Case :
- SC-70, SOT-323
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- Max Collector Current :
- 500mA
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- VCEsat-Max :
- 0.7 V
- Current :
- 5A
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Base Part Number :
- BC817
- Collector Base Voltage (VCBO) :
- 50V
- Voltage :
- 45V
- Number of Pins :
- 3
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 200mW
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Collector-Base Capacitance-Max :
- 5pF
- ECCN Code :
- EAR99
- Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- Datasheets
- BC817-40W,135
BC817-40W,135 Documents

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC817-40W,135 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BC817-40W,135 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40W,135 Applications
There are a lot of Nexperia USA Inc.
BC817-40W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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