BC817-40LT3
- Mfr.Part #
- BC817-40LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 24,632
- In Stock :
- 24,632
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Saturation Voltage :
- 700mV
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Published :
- 2007
- Halogen Free :
- Halogen Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Width :
- 1.3mm
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 100MHz
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Factory Lead Time :
- 10 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 100MHz
- Max Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Operating Temperature :
- -65°C~150°C TJ
- Mounting Type :
- Surface Mount
- Length :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- JESD-609 Code :
- e3
- Base Part Number :
- BC817
- Transistor Type :
- NPN
- hFE Min :
- 250
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 940μm
- Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 45V
- Datasheets
- BC817-40LT3

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817-40LT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BC817-40LT3G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40LT3G Applications
There are a lot of ON Semiconductor
BC817-40LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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