BC817-40LT3
- Mfr.Part #
- BC817-40LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 24,632
- In Stock :
- 24,632
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 700mV
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 300mW
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Max Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Pbfree Code :
- yes
- hFE Min :
- 250
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Length :
- 2.9mm
- Element Configuration :
- Single
- Published :
- 2007
- Contact Plating :
- Tin
- Height :
- 940μm
- Factory Lead Time :
- 10 Weeks
- Halogen Free :
- Halogen Free
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Max Power Dissipation :
- 300mW
- Base Part Number :
- BC817
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 45V
- Datasheets
- BC817-40LT3

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817-40LT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 100mA 1V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
BC817-40LT3G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40LT3G Applications
There are a lot of ON Semiconductor
BC817-40LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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