BC817-40LT1G
- Mfr.Part #
- BC817-40LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 63,949
- In Stock :
- 63,949
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- hFE Min :
- 250
- Radiation Hardening :
- No
- Width :
- 1.3mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Length :
- 2.9mm
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 45V
- Number of Pins :
- 3
- Published :
- 2004
- Halogen Free :
- Halogen Free
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Pin Count :
- 3
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Packaging :
- Cut Tape (CT)
- Factory Lead Time :
- 10 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Element Configuration :
- Single
- Type :
- GENERAL PURPOSE
- Collector Emitter Voltage (VCEO) :
- 45V
- Height :
- 940μm
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 50V
- Base Part Number :
- BC817
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 hours ago)
- Max Power Dissipation :
- 300mW
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 700mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Datasheets
- BC817-40LT1G
BC817-40LT1G Documents

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC817-40LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40LT1G Applications
There are a lot of ON Semiconductor
BC817-40LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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