BC817-40LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

BC817

Max Breakdown Voltage :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 100mA 1V

Collector Emitter Saturation Voltage :

700mV

hFE Min :

250

Number of Terminations :

3

Max Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Emitter Base Voltage (VEBO) :

5V

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Frequency :

100MHz

Number of Pins :

3

Terminal Form :

Gull wing

Pbfree Code :

yes

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

45V

Factory Lead Time :

10 Weeks

Halogen Free :

Halogen Free

Gain Bandwidth Product :

100MHz

Type :

GENERAL PURPOSE

Time@Peak Reflow Temperature-Max (s) :

40

Height :

940μm

Pin Count :

3

Contact Plating :

Tin

Max Collector Current :

500mA

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

45V

Width :

1.3mm

Transition Frequency :

100MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Number of Elements :

1

Operating Temperature :

-65°C~150°C TJ

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

50V

Length :

2.9mm

Published :

2004

Transistor Type :

NPN

Element Configuration :

Single

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 4 hours ago)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260