BC817-40LT1
- Mfr.Part #
- BC817-40LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 500MA SOT23
- Stock
- 45,588
- In Stock :
- 45,588
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Contact Plating :
- Tin
- Base Part Number :
- BC817
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 300mW
- hFE Min :
- 250
- Packaging :
- Cut Tape (CT)
- Type :
- GENERAL PURPOSE
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Published :
- 2004
- Pin Count :
- 3
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Max Breakdown Voltage :
- 45V
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Operating Temperature :
- -65°C~150°C TJ
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Voltage (VCEO) :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Power Dissipation :
- 300mW
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Length :
- 2.9mm
- Max Collector Current :
- 500mA
- Height :
- 940μm
- Collector Emitter Saturation Voltage :
- 700mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 10 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 4 hours ago)
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Datasheets
- BC817-40LT1

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC817-40LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 250 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC817-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40LT1G Applications
There are a lot of ON Semiconductor
BC817-40LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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