BC817-16LT3G
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- Mfr.Part #
- BC817-16LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 17,062
- In Stock ：
- 17,062
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Power Dissipation :
- 300mW
- Max Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2008
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Base Part Number :
- BC817
- Pbfree Code :
- yes
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Number of Terminations :
- 3
- hFE Min :
- 100
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 300mW
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 700mV
- Max Collector Current :
- 500mA
- Operating Temperature :
- -65°C~150°C TJ
- ECCN Code :
- EAR99
- Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Halogen Free :
- Halogen Free
- Datasheets
- BC817-16LT3G
BC817-16LT3G Documents
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817-16LT3G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.
BC817-16LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-16LT3G Applications
There are a lot of ON Semiconductor
BC817-16LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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