BC817-16LT3
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- Mfr.Part #
- BC817-16LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 25,004
- In Stock ：
- 25,004
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2008
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- -65°C~150°C TJ
- Power Dissipation :
- 300mW
- Max Collector Current :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 45V
- Factory Lead Time :
- 4 Weeks
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Halogen Free :
- Halogen Free
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 700mV
- Base Part Number :
- BC817
- Collector Base Voltage (VCBO) :
- 50V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- hFE Min :
- 100
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Datasheets
- BC817-16LT3
BC817-16LT3 Documents
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC817-16LT3G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.
BC817-16LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-16LT3G Applications
There are a lot of ON Semiconductor
BC817-16LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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