BC80840MTF
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- Mfr.Part #
- BC80840MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.8A SOT23-3
- Stock
- 56,581
- In Stock ：
- 56,581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 800mA
- Collector Base Voltage (VCBO) :
- -30V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Length :
- 2.9mm
- hFE Min :
- 100
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Base Part Number :
- BC808
- Weight :
- 30mg
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 25V
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -700mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Contact Plating :
- Tin
- Factory Lead Time :
- 6 Weeks
- Collector Emitter Voltage (VCEO) :
- 25V
- Max Power Dissipation :
- 310mW
- Mount :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 310mW
- Lead Free :
- Lead Free
- Published :
- 2002
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 970μm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Transition Frequency :
- 100MHz
- Width :
- 1.3mm
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- BC80840MTF
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80840MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80840MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80840MTF Applications
There are a lot of ON Semiconductor
BC80840MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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