BC80840MTF
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- Mfr.Part #
- BC80840MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.8A SOT23-3
- Stock
- 56,581
- In Stock ：
- 56,581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Max Collector Current :
- 800mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100nA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 25V
- Operating Temperature :
- 150°C TJ
- Height :
- 970μm
- Factory Lead Time :
- 6 Weeks
- Weight :
- 30mg
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Length :
- 2.9mm
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 25V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 310mW
- hFE Min :
- 100
- Power Dissipation :
- 310mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Width :
- 1.3mm
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -700mV
- Emitter Base Voltage (VEBO) :
- -5V
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Base Part Number :
- BC808
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -30V
- Frequency :
- 100MHz
- Datasheets
- BC80840MTF
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80840MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80840MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80840MTF Applications
There are a lot of ON Semiconductor
BC80840MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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