BC80840MTF
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- Mfr.Part #
- BC80840MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.8A SOT23-3
- Stock
- 56,581
- In Stock ：
- 56,581
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 25V
- Max Power Dissipation :
- 310mW
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Height :
- 970μm
- Factory Lead Time :
- 6 Weeks
- Number of Pins :
- 3
- Length :
- 2.9mm
- Gain Bandwidth Product :
- 100MHz
- Width :
- 1.3mm
- Transistor Type :
- PNP
- Terminal Position :
- Dual
- Base Part Number :
- BC808
- Collector Emitter Saturation Voltage :
- -700mV
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 25V
- Polarity/Channel Type :
- PNP
- hFE Min :
- 100
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 25V
- Operating Temperature :
- 150°C TJ
- Published :
- 2002
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -30V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 30mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 310mW
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Frequency :
- 100MHz
- Datasheets
- BC80840MTF
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80840MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80840MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80840MTF Applications
There are a lot of ON Semiconductor
BC80840MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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