BC80840MTF
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- Mfr.Part #
- BC80840MTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.8A SOT23-3
- Stock
- 56,581
- In Stock ：
- 56,581
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 100
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 25V
- ECCN Code :
- EAR99
- Length :
- 2.9mm
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Height :
- 970μm
- Base Part Number :
- BC808
- Transistor Application :
- SWITCHING
- Weight :
- 30mg
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- Factory Lead Time :
- 6 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 310mW
- Collector Emitter Saturation Voltage :
- -700mV
- Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -30V
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Published :
- 2002
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 25V
- Emitter Base Voltage (VEBO) :
- -5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Max Breakdown Voltage :
- 25V
- Max Collector Current :
- 800mA
- Power Dissipation :
- 310mW
- Operating Temperature :
- 150°C TJ
- Width :
- 1.3mm
- Datasheets
- BC80840MTF
BC80840MTF Documents
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80840MTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 800mA volts.
BC80840MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80840MTF Applications
There are a lot of ON Semiconductor
BC80840MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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