BC808-25LT1G
- Mfr.Part #
- BC808-25LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A SOT23-3
- Stock
- 84
- In Stock :
- 84
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- -700mV
- Length :
- 3.04mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.11mm
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Surface Mount :
- yes
- Max Breakdown Voltage :
- 25V
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 300mW
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Base Part Number :
- BC808
- Halogen Free :
- Halogen Free
- Width :
- 2.64mm
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 25V
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- hFE Min :
- 160
- Published :
- 2007
- Max Power Dissipation :
- 225mW
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BC808-25LT1G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC808-25LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC808-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC808-25LT1G Applications
There are a lot of ON Semiconductor
BC808-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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