BC808-25LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

hFE Min :

160

Collector Emitter Breakdown Voltage :

25V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Power Dissipation :

300mW

Surface Mount :

yes

Base Part Number :

BC808

Number of Elements :

1

Gain Bandwidth Product :

100MHz

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

30V

Length :

3.04mm

Max Collector Current :

500mA

Polarity/Channel Type :

PNP

Element Configuration :

Single

Max Breakdown Voltage :

25V

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Number of Pins :

3

REACH SVHC :

No SVHC

Published :

2007

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

2 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA 1V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Power Dissipation :

225mW

Radiation Hardening :

No

Pin Count :

3

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

25V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

-700mV

Transistor Element Material :

SILICON

Terminal Position :

Dual

Halogen Free :

Halogen Free

Width :

2.64mm

Frequency :

100MHz

Emitter Base Voltage (VEBO) :

5V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

100MHz

Height :

1.11mm

Contact Plating :

Tin

Number of Terminations :

3