BC808-25LT1G

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Mfr.Part #
BC808-25LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 25V 0.5A SOT23-3
Stock
84
In Stock :
84

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
100MHz
Pbfree Code :
yes
Max Collector Current :
500mA
Collector Emitter Saturation Voltage :
-700mV
Length :
3.04mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
1.11mm
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Contact Plating :
Tin
Polarity/Channel Type :
PNP
Collector Base Voltage (VCBO) :
30V
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage :
25V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Surface Mount :
yes
Max Breakdown Voltage :
25V
Factory Lead Time :
2 Weeks
Number of Elements :
1
Terminal Form :
Gull wing
ECCN Code :
EAR99
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Power Dissipation :
300mW
Number of Pins :
3
Number of Terminations :
3
Base Part Number :
BC808
Halogen Free :
Halogen Free
Width :
2.64mm
JESD-609 Code :
e3
Collector Emitter Voltage (VCEO) :
25V
Gain Bandwidth Product :
100MHz
Peak Reflow Temperature (Cel) :
260
Pin Count :
3
Package / Case :
TO-236-3, SC-59, SOT-23-3
Frequency :
100MHz
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
hFE Min :
160
Published :
2007
Max Power Dissipation :
225mW
Operating Temperature :
-55°C~150°C TJ
REACH SVHC :
No SVHC
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Transistor Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Emitter Base Voltage (VEBO) :
5V
Datasheets
BC808-25LT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi BC808-25LT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:3, Number of Terminations:3, Base Part Number:BC808, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:-55°C~150°C TJ, BC808-25LT1G pinout, BC808-25LT1G datasheet PDF, BC808-25LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC808-25LT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC808-25LT1G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC808-25LT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 500mA volts.

BC808-25LT1G Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BC808-25LT1G Applications


There are a lot of ON Semiconductor
BC808-25LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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