BC808-25LT1

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Mfr.Part #
BC808-25LT1
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 25V 0.5A SOT23-3
Stock
226,079
In Stock :
226,079

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Width :
2.64mm
Max Collector Current :
500mA
Max Breakdown Voltage :
25V
Transition Frequency :
100MHz
Pin Count :
3
Number of Pins :
3
Mounting Type :
Surface Mount
Element Configuration :
Single
Base Part Number :
BC808
Polarity/Channel Type :
PNP
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
JESD-609 Code :
e3
hFE Min :
160
Collector Emitter Voltage (VCEO) :
25V
Length :
3.04mm
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
1.11mm
Emitter Base Voltage (VEBO) :
5V
Current - Collector Cutoff (Max) :
100nA ICBO
Package / Case :
TO-236-3, SC-59, SOT-23-3
Collector Emitter Saturation Voltage :
-700mV
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Form :
Gull wing
Factory Lead Time :
2 Weeks
Max Power Dissipation :
225mW
Packaging :
Tape and Reel (TR)
Number of Terminations :
3
Gain Bandwidth Product :
100MHz
Power Dissipation :
300mW
Number of Elements :
1
Collector Base Voltage (VCBO) :
30V
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Surface Mount :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Terminal Position :
Dual
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Collector Emitter Breakdown Voltage :
25V
Lead Free :
Lead Free
Frequency :
100MHz
Transistor Type :
PNP
Published :
2007
Peak Reflow Temperature (Cel) :
260
Contact Plating :
Tin
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Halogen Free :
Halogen Free
Datasheets
BC808-25LT1
Introducing Transistors - Bipolar (BJT) - Single onsemi BC808-25LT1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Base Part Number:BC808, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Terminations:3, BC808-25LT1 pinout, BC808-25LT1 datasheet PDF, BC808-25LT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC808-25LT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC808-25LT1


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC808-25LT1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 500mA volts.

BC808-25LT1G Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BC808-25LT1G Applications


There are a lot of ON Semiconductor
BC808-25LT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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