BC808-25LT1
- Mfr.Part #
- BC808-25LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A SOT23-3
- Stock
- 226,079
- In Stock :
- 226,079
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Width :
- 2.64mm
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 30V
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 25V
- Base Part Number :
- BC808
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 2 Weeks
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 1.11mm
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Frequency :
- 100MHz
- Max Power Dissipation :
- 225mW
- Power Dissipation :
- 300mW
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 25V
- Published :
- 2007
- Halogen Free :
- Halogen Free
- hFE Min :
- 160
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Length :
- 3.04mm
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- -700mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 25V
- Datasheets
- BC808-25LT1
BC808-25LT1 Documents

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC808-25LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC808-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC808-25LT1G Applications
There are a lot of ON Semiconductor
BC808-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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