BC808-25LT1
- Mfr.Part #
- BC808-25LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A SOT23-3
- Stock
- 226,079
- In Stock :
- 226,079
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Width :
- 2.64mm
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 25V
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Base Part Number :
- BC808
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- hFE Min :
- 160
- Collector Emitter Voltage (VCEO) :
- 25V
- Length :
- 3.04mm
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.11mm
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -700mV
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 225mW
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 30V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Breakdown Voltage :
- 25V
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Transistor Type :
- PNP
- Published :
- 2007
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Halogen Free :
- Halogen Free
- Datasheets
- BC808-25LT1

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC808-25LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 25V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC808-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC808-25LT1G Applications
There are a lot of ON Semiconductor
BC808-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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