BC80740MTF
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- Mfr.Part #
- BC80740MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 11,070
- In Stock ：
- 11,070
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Polarity/Channel Type :
- PNP
- hFE Min :
- 100
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- -50V
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 45V
- Base Part Number :
- BC807
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Height :
- 970μm
- Max Power Dissipation :
- 310mW
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Packaging :
- Tape and Reel (TR)
- Published :
- 2002
- Collector Emitter Saturation Voltage :
- -700mV
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Weight :
- 30mg
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -5V
- REACH SVHC :
- No SVHC
- Width :
- 1.3mm
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Power Dissipation :
- 310mW
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Max Collector Current :
- 800mA
- Frequency :
- 100MHz
- RoHS Status :
- RoHS Compliant
- Length :
- 2.92mm
- Element Configuration :
- Single
- Datasheets
- BC80740MTF
BC80740MTF Documents
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80740MTF Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.100MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 800mA volts.
BC80740MTF Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
BC80740MTF Applications
There are a lot of ON Semiconductor
BC80740MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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