BC80725MTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Factory Lead Time :

13 Weeks

Current - Collector Cutoff (Max) :

100nA

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Current :

8A

Collector Base Voltage (VCBO) :

-50V

Pbfree Code :

yes

Number of Terminations :

3

Height :

960μm

Width :

1.3mm

Contact Plating :

Tin

Base Part Number :

BC807

Mount :

Surface Mount

hFE Min :

100

Transistor Type :

PNP

Frequency :

100MHz

Terminal Position :

Dual

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA 1V

Length :

2.9mm

RoHS Status :

RoHS Compliant

Power Dissipation :

310mW

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Transition Frequency :

100MHz

Max Breakdown Voltage :

45V

Published :

2002

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Pins :

3

Weight :

59.987591mg

Lead Free :

Lead Free

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

45V

Max Collector Current :

800mA

Voltage :

45V

Collector Emitter Saturation Voltage :

-700mV

Max Power Dissipation :

310mW

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Gain Bandwidth Product :

100MHz

Collector Emitter Voltage (VCEO) :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING