BC80725MTF
- Mfr.Part #
- BC80725MTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.8A SOT23-3
- Stock
- 21,417
- In Stock :
- 21,417
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 45V
- Contact Plating :
- Tin
- Current :
- 8A
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Voltage :
- 45V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- -700mV
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- -50V
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BC807
- Terminal Position :
- Dual
- Length :
- 2.9mm
- Collector Emitter Voltage (VCEO) :
- 45V
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Power Dissipation :
- 310mW
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Published :
- 2002
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 310mW
- hFE Min :
- 100
- Factory Lead Time :
- 13 Weeks
- Max Collector Current :
- 800mA
- Width :
- 1.3mm
- Weight :
- 59.987591mg
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 960μm
- Transistor Type :
- PNP
- Datasheets
- BC80725MTF
BC80725MTF Documents

PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC80725MTF Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 800mA volts.
BC80725MTF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC80725MTF Applications
There are a lot of ON Semiconductor
BC80725MTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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