BC80725E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Package :

Bulk

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Supplier Device Package :

PG-SOT23

Collector Current-Max (IC) :

0.5 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 100mA, 1V

Number of Elements :

1

DC Current Gain-Min (hFE) :

160

Voltage - Collector Emitter Breakdown (Max) :

45 V

Current - Collector (Ic) (Max) :

500 mA

Frequency - Transition :

200MHz

Terminal Position :

Dual

Current - Collector Cutoff (Max) :

100nA (ICBO)

Reach Compliance Code :

Compliant

Product Status :

Active

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Number of Terminals :

3

Collector-Emitter Voltage-Max :

45 V

Transistor Application :

AMPLIFIER

Series :

-

ECCN Code :

EAR99

Surface Mount :

yes

Mounting Type :

Surface Mount

Factory Lead Time :

1 Week

Power - Max :

330 mW

Operating Temperature :

150°C (TJ)

Package Shape :

RECTANGULAR

Configuration :

Single

JESD-30 Code :

R-PDSO-G3

Transistor Type :

PNP

Polarity/Channel Type :

PNP

Package / Case :

TO-236-3, SC-59, SOT-23-3

Manufacturer :

Infineon Technologies AG